Source/Drain Re-Growth for Manufacturing III-V Based Transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hsin Ko, Clement Hsingjen Wann
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Abstract
A method of forming an integrated circuit structure includes providing a substrate, and epitaxially growing a first semiconductor layer over the substrate. The first semiconductor layer includes a first III-V compound semiconductor material formed of group III and group V elements. The method further includes forming a gate structure on the first semiconductor layer, and forming a gate spacer on at least one sidewall of the gate structure. After the step of forming the gate structure, a second semiconductor layer including a second III-V compound semiconductor material is epitaxially grown on the first semiconductor layer.
Claims35
A method of forming an integrated circuit structure, the method comprising:
- providing a substrate;
- epitaxially growing a first semiconductor layer over the substrate, wherein the first semiconductor layer comprises a first III-V compound semiconductor material formed of group III and group V elements;
- forming a gate structure on the first semiconductor layer;
- forming a gate spacer on at least one sidewall of the gate structure;
- and
- after the step of forming the gate structure, epitaxially growing a second semiconductor layer comprising a second III-V compound semiconductor material on the first semiconductor layer.
A method of forming an integrated circuit structure, the method comprising:
- providing a semiconductor substrate;
- epitaxially growing a bottom barrier over the semiconductor substrate;
- epitaxially growing a channel layer over the bottom layer, the channel layer comprising a first III-V compound semiconductor material formed of group III and group V elements;
- epitaxially growing a top barrier over the channel layer, wherein the bottom barrier and the top barrier are semiconductor layers having bandgaps greater than a bandgap of the channel layer;
- forming a gate structure on the top barrier;
- forming a gate spacer on a sidewall of the gate structure;
- and
- after the step of forming the gate structure and the step of forming the gate spacer, epitaxially growing an epitaxy layer comprising a second III-V compound semiconductor material on and contacting the top barrier.
A method of forming an integrated circuit structure, the method comprising:
- providing a semiconductor substrate;
- epitaxially growing a channel layer over the semiconductor substrate, wherein the channel layer comprises a first III-V compound semiconductor material formed of group III and group V elements;
- forming a gate structure on and contacting the channel layer;
- forming a gate spacer on a sidewall of the gate structure;
- and
- performing a selective epitaxial growth to grow an epitaxy layer comprising a second III-V compound semiconductor material on and contacting the channel layer.
An integrated circuit structure comprising:
- a substrate;
- a first semiconductor layer over the substrate, wherein the first semiconductor layer comprises a first III-V compound semiconductor material formed of group III and group V elements;
- a gate structure on the first semiconductor layer;
- a gate spacer on at least one sidewall of the gate structure;
- and
- a second semiconductor layer comprising a second III-V compound semiconductor material over the first semiconductor layer, wherein the gate spacer adjoins the second semiconductor layer and the gate structure, and wherein the gate spacer spaces apart the second semiconductor layer from the gate structure.
An integrated circuit structure comprising:
- a semiconductor substrate;
- a first semiconductor layer over the semiconductor substrate, wherein the first semiconductor layer comprises a first III-V compound semiconductor material formed of group III and group V elements;
- a gate structure on the first semiconductor layer;
- a gate spacer on at least one sidewall of the gate structure;
- and
- a second semiconductor layer comprising a second III-V compound semiconductor material over the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer have an interface level with a bottom surface of the gate structure and a bottom surface of the gate spacer.
An integrated circuit structure comprising:
- a substrate;
- a first semiconductor layer over the substrate, wherein the first semiconductor layer comprises a first III-V compound semiconductor material formed of group III and group V elements;
- a gate structure on the first semiconductor layer;
- a gate spacer on at least one sidewall of the gate structure;
- and
- a second semiconductor layer comprising a group IV semiconductor material as a majority element over the first semiconductor layer, wherein the gate spacer adjoins the second semiconductor layer and the gate structure, and wherein the gate spacer spaces apart the second semiconductor layer from the gate structure.
Dependencies are inferred from the claim text.