Diode

A method for manufacturing a diode, comprising:

• providing a wafer of a first conductivity type, the wafer having a first main side and a second main side opposite the first main side, part of the wafer forming a base layer in the diode;
• creating an anode layer of a second conductivity type on the second main side by implanting first ions into the second main side of the wafer;
• driving the implanted first ions into the wafer;
• creating a fourth layer by implanting second ions into the first main side of the wafer;
• driving the second ions into the wafer;
• applying a masking layer on the fourth layer;
• creating a plurality of first zones of the first conductivity type in the fourth layer through the masking layer, and forming a plurality of second zones of a second conductivity type in those parts of the fourth layer in which no first zones are created, such that the plurality of first and second zones are arranged alternately on the first main side, the plurality of first zones of the first conductivity type having a higher doping concentration than the base layer;
• a part of the base layer on the second main side forming a first sublayer;
• a part of the base layer on the first main side forming the second sublayer, the second sublayer being in contact with the plurality of first and second zones;
• irradiating the wafer with third ions to create a third layer of the first conductivity type between the first and second sublayers;
• annealing the third ions;
• and
• creating a cathode electrode on the first main side and an anode electrode on the second main side.

A method for manufacturing a diode, comprising:

• providing a wafer of a first conductivity type, the wafer having a first side and a second side opposite the first side, part of the wafer forming a first sublayer in the diode;
• epitactically growing a third layer on the first side;
• growing a fifth layer on the third layer, part of the fifth layer forming a second sublayer in the diode;
• the first and second sublayer forming a base layer in the diode;
• creating a fourth layer by implanting second ions in the fifth layer;
• driving the second ions into the fifth layer;
• applying a masking layer on the fourth layer;
• creating a plurality of first zones of the first conductivity type in the fourth layer through the masking layer, and forming a plurality of second zones of a second conductivity type in those parts of the fourth layer in which no first zones are created, such that the plurality of first and second zones are arranged alternately, the plurality of first zones of the first conductivity type having a higher doping concentration than the base layer, and the plurality of first and second zones being in contact with the second sublayer;
• creating an anode layer of a second conductivity type on the second side by implanting first ions into the second side of the wafer;
• driving the implanted first ions into the wafer;
• irradiating the wafer with third ions to create a third layer of the first conductivity type between the first and second sublayers;
• annealing the third ions;
• and
• creating a cathode electrode on the first main side and an anode electrode on the second main side.