US 2010/0301363 A1 · VERTICAL RESONATOR TYPE LIGHT EMITTING DIODE

Abstract

A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 5, and a first reflector layer 3 at its light reflecting side and a second reflector layer 9 at its light emitting side which are formed to sandwich the active later 5 between them, wherein each of the first reflector layer 3 and the second reflector layer 9 is structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and the second reflector layer 9 has a number of such pairs which is not less than 1/10 and not more than ⅓ of that which said first reflector layer 3 has. The emission output power can be enhanced when the first reflector layer has a number of such pairs which is not less than 11 and not more than 41.

Claims7

Dependent claims

A vertical resonator type light emitting diode comprising:

an active layer;
a first reflector layer at a light reflecting side of said active layer, said first reflector layer having one or more pairs of films alternately disposed, one of the pair of films being a relatively high refractive index film of Al0.45Ga0.55As, the other of the pair of films being a relatively low refractive index film of AlAs;
and
a second reflector layer at a light emitting side of said active layer, the first reflector layer and the second reflector layer sandwiching said active layer, said second reflector layer having one or more pairs of films alternately disposed, one of the pair of films being a relatively high refractive index film of Al0.45Ga0.55As, the other of the pair of films being a relatively low refractive index film of AlAs,
wherein the number of said pairs in said first reflector layer is not less than 11 and not more than 41, and the number of said pairs in said second reflector layer is not less than 1/10 and not more than ¼ of the number of said pairs in said first reflector layer.

2 more elements

Dependencies are inferred from the claim text.

Vertical resonator type light emitting diode

Life of this patent

Vertical resonator type light emitting diode

Life of this patent

Abstract

Claims7