US 2010/0301348 A1 · Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip

Abstract

A nitride semiconductor chip is provided that offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor chip) has an n-type GaN substrate having as a principal growth plane a plane having an off-angle in the a-axis direction relative to the m plane, and a nitride semiconductor layer formed on the principal growth plane of the n-type GaN substrate. The n-type GaN substrate includes a depressed portion (carved region), which is carved from the principal growth plane in the thickness direction, and an uncarved region, which is a region not carved. The nitride semiconductor layer formed on the n-type GaN substrate has a gradient thickness region whose thickness decreases in a gradient fashion toward the depressed portion (carved region) and an emission portion formation region whose thickness varies very little. In the emission portion formation region 6, a ridge portion is formed.

Claims22

Dependent claims

A nitride semiconductor wafer comprising:

a nitride semiconductor substrate having, as a principal growth plane, a plane having an off-angle in an a-axis direction relative to an m plane;
and
a nitride semiconductor layer formed on the principal growth plane of the nitride semiconductor substrate,
wherein the nitride semiconductor substrate includes a carved region, which is a region carved from the principal growth plane in a thickness direction, and an uncarved region, which is a region not carved.

1 more element

Dependencies are inferred from the claim text.

Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip

Life of this patent

Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip

Life of this patent

Abstract

Claims22