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US 2010/0301342 A1Published application
Increased grain size in metal wiring structures through flash tube irradiation
OwnerHiroki NAKAMURA, Masaki Kado +1inventors
InventorsHiroki NAKAMURA, Masaki Kado, Shigeru Aomori
Life of this patent
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Abstract
A method for forming a wiring structure includes forming a metal layer on a substrate, and annealing the metal layer by irradiating the metal layer with light emitted from at least one flash tube, thereby growing crystalline grains of the metal layer.
Claims10
A wiring structure having a plurality of thin film transistors, comprising:
- an insulating substrate;
- a first insulating layer formed on the substrate;
- a plurality of scanning lines including gate electrodes formed on the first insulating substrate;
- a second insulating layer covering the scanning lines and the first insulating layer;
- a plurality of semiconductor layers formed on the second insulating layer;
- source and drain electrodes connected with each of the semiconductor layer;
- and
- a plurality of signal lines electrically connected with the drain electrodes, wherein
- each of the scanning lines includes a barrier metal layer formed on the first insulating layer, and a metal layer essentially comprising a copper material and disposed on a top surface of the barrier metal layer, of which main crystalline orientation is (111) face, and
- the second insulating layer includes silicon nitride.
7 more elements
A wiring structure having a plurality of thin film transistors, comprising:
- an insulating substrate;
- a first insulating layer formed on the substrate;
- a plurality of scanning lines including gate electrodes formed on the first insulating substrate;
- a second insulating layer covering the scanning lines and the first insulating layer;
- a plurality of semiconductors layer formed on the second insulating layer;
- source and drain electrodes connected with each of the semiconductor layer;
- and
- a plurality of signal lines electrically connected with the drain electrodes, wherein
- each of the scanning lines includes a barrier oxide layer and a metal layer essentially comprises copper material disposed on a top surface of the barrier oxide layer, of which main crystalline orientation is (111) face, and
- the second insulating layer includes silicon nitride.
7 more elements
Dependencies are inferred from the claim text.