High Voltage Insulated Gate Bipolar Transistors with Minority Carrier Diverter
AssigneeCree, Inc.
InventorsSei-Hyung Ryu, Qingchun Zhang
Life of this patent
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Abstract
High power insulated gate bipolar junction transistors are provided that include a wide band gap semiconductor bipolar junction transistor (“BJT”) and a wide band gap semiconductor MOSFET that is configured to provide a current to the base of the BJT. These devices further include a minority carrier diversion semiconductor layer on the base of the BJT and coupled to the emitter of the BJT, the minority carrier diversion semiconductor layer having a conductivity type opposite the conductivity type of the base of the BJT and forming a heterojunction with the base of the BJT.
Claims19
A high power insulated gate bipolar junction transistor (“IGBT”), comprising:
- a wide band gap semiconductor bipolar junction transistor (“BJT”) having a collector, an emitter and a base;
- a wide band gap semiconductor MOSFET that is configured to provide a current to the base of the BJT;
- and
- a minority carrier diversion semiconductor layer on the base of the BJT, the minority carrier diversion semiconductor layer having a conductivity type opposite the conductivity type of the base of the BJT and forming a heterojunction with the base of the BJT.
A high power p-channel silicon carbide insulated gate bipolar junction transistor (“IGBT”), comprising:
- an n-type silicon carbide injection layer;
- a p-type silicon carbide base layer on the n-type silicon carbide injection layer;
- a p-type silicon carbide drift layer on the p-type silicon carbide base layer opposite the n-type silicon carbide injection layer;
- a silicon carbide n-well in an upper portion of the p-type silicon carbide drift layer;
- an n-type silicon layer on the p-type silicon carbide drift layer opposite the p-type silicon carbide base layer;
- a gate insulation layer on the silicon carbide n-well and the n-type silicon layer;
- and
- a gate electrode on the gate insulation layer opposite the silicon carbide n-well and the n-type silicon layer.
A high power silicon carbide insulated gate bipolar junction transistor (“IGBT”), comprising:
- a silicon carbide bipolar junction transistor (“BJT”) having a collector region, an emitter region and a base region;
- a silicon carbide MOSFET having a source region, a drain region and a gate electrode;
- and
- a doped semiconductor layer within a layer structure of the silicon carbide IGBT that forms a p-n heterojunction with a silicon carbide layer of the silicon carbide IGBT.
Dependencies are inferred from the claim text.