Memory Devices Having an Embedded Resistance Memory with Metal-Oxygen Compound
AssigneeMactronic International Co., Ltd.
InventorsChiaHua Ho, Erh-Kun Lai
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Abstract
Memory devices based on tungsten-oxide memory regions are described, along with methods for manufacturing and methods for programming such devices. The tungsten-oxide memory region can be formed by oxidation of tungsten material using a non-critical mask, or even no mask at all in some embodiments. A memory device described herein includes a bottom electrode and a memory element on the bottom electrode. The memory element comprises at least one tungsten-oxygen compound and is programmable to at least two resistance states. A top electrode comprising a barrier material is on the memory element, the barrier material preventing movement of metal-ions from the top electrode into the memory element.
Claims16
A memory device comprising:
- a substrate;
- a doped region in the substrate;
- a plug contacted with the doped region;
- a memory element on the plug, the memory element comprising at least one metal-oxygen compound;
- and
- an electrode on the memory element.
A memory device comprising:
- a transistor having a source and a drain;
- a memory structure including a metal oxide and a conductor, the memory structure connected with one of the source and the drain;
- and
- an interconnection contacted with the memory structure.
Dependencies are inferred from the claim text.