Display device having oxide thin film transistor and fabrication method thereof
AssigneeLG Display Co., Ltd.
InventorsIm-Kuk KANG, Dae-Won Kim
Life of this patent
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Abstract
A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide semiconductor layer of a pixel area is etched by using a half-tone mask, a metal layer is formed at a contact hole of the etched gate insulting layer, and then a passivation layer formed thereon is etched. Thus, an overhang of the passivation layer can be prevented from being generated when the gate insulating layer is etched, and accordingly, the fabrication process can be simplified.
Claims15
A method for fabricating a display device, the method comprising:
- providing first and second substrates including a pixel area, a gate pad area, and a data pad area;
- forming a gate electrode at the pixel area of the first substrate and a gate pad at the gate pad area of the first substrate;
- depositing a nitride-based gate insulating material and an oxide semiconductor material on the entire surface of the first substrate;
- etching the oxide semiconductor material at the pixel area to form an oxide semiconductor layer over the gate electrode, etching the oxide semiconductor material and an the gate insulating material at the gate pad area to expose a gate pad, and etching the oxide semiconductor material at the data pad area;
- forming source and drain electrodes on the oxide semiconductor layer of the pixel area, forming a metal layer on exposed gate pad of the gate pad area and on the gate insulating layer, and forming a data pad at the data pad area;
- forming a passivation layer on the entire surface of the first substrate and etching the passivation layer to form contact holes at the passivation layer on the drain electrode, the metal layer and the data pad;
- forming and etching a transparent conductive layer to form a pixel electrode connected with the drain electrode at the pixel area and forming a transparent conductive layer on the metal layer and the data pad of the data pad area;
- and
- attaching the first and second substrates with a liquid crystal layer interposed therebetween.
A display device comprising:
- first and second substrates including a pixel area, a gate pad area, and a data pad area;
- an oxide thin film transistor (TFT) formed at the pixel area of the first substrate, the oxide thin film transistor including a gate electrode on the first substrate, a gate insulating layer on the whole area of the first substrate, an oxide semiconductor layer on the gate insulating layer, and source and drain electrodes on the oxide semiconductor layer;
- a gate pad and a data pad at the gate pad area and the data pad area of the first substrate;
- a metal layer on the gate insulating layer at the gate pad area and connected with the gate electrode via a contact hole in the gate insulating layer;
- a passivation layer on the whole area of the first substrate;
- a pixel electrode on the passivation layer of the pixel area;
- first and second transparent conductive layers at the gate pad area and the data pad area, respectively;
- and
- a liquid crystal layer between the first and second substrates.
Dependencies are inferred from the claim text.