Organic Semiconductor Device

An organic semiconductor device including an organic thin film transistor comprising:

• a substrate;
• a gate electrode disposed on the substrate;
• a first gate insulating film disposed on the gate electrode;
• a second gate insulating film disposed on the first gate insulating film;
• a third gate insulating film disposed on the second gate insulating film;
• a source electrode and a drain electrode disposed on the third gate insulating film and composed of a layered structure of a first metal layer and a second metal layer;
• and
• an organic semiconductor layer disposed on the third gate insulating film and between the source electrode and the drain electrode.

An organic semiconductor device including an organic thin film transistor comprising:

• a substrate;
• a gate electrode disposed on the substrate;
• a first gate insulating film disposed on the gate electrode;
• a second gate insulating film disposed on the first gate insulating film;
• a third gate insulating film disposed on the second gate insulating film;
• a fourth gate insulating film disposed on the third gate insulating film;
• a fifth gate insulating film disposed on the fourth gate insulating film;
• a source electrode and a drain electrode disposed on the fifth gate insulating film and composed of a layered structure of a first metal layer and a second metal layer;
• and
• an organic semiconductor layer disposed on the fifth gate insulating film and between the source electrode and the drain electrode.

An organic semiconductor device including an organic thin film transistor comprising:

• a substrate;
• a gate electrode disposed on the substrate;
• a first gate insulating film disposed on the gate electrode;
• a second gate insulating film disposed on the first gate insulating film;
• a source electrode and a drain electrode composed of a layered structure of a first metal layer disposed on the second gate insulating film and a second metal layer disposed on the first metal layer;
• and
• an organic semiconductor layer disposed on the second gate insulating film and between the source electrode and the drain electrode, wherein
• a work function of the first metal layer larger than a work function of the second metal layer.

An organic semiconductor device including an organic thin film transistor comprising:

• a substrate;
• a gate electrode disposed on the substrate;
• a first gate insulating film disposed on the gate electrode;
• a second gate insulating film disposed on the first gate insulating film;
• an organic semiconductor layer disposed on the second gate insulating film;
• and
• a source electrode and a drain electrode composed of a layered structure of a first metal layer disposed on the organic semiconductor layer and a second metal layer disposed on the first metal layer, wherein
• a work function of the first metal layer is larger than a work function of the second metal layer.

An organic semiconductor device including an organic thin film transistor comprising:

• a substrate;
• a gate electrode disposed on the substrate;
• a first gate insulating film disposed on the gate electrode;
• a second gate insulating film disposed on the first gate insulating film;
• an organic semiconductor layer disposed on the second gate insulating film;
• and
• a source electrode and a drain electrode composed of a layered structure of a first metal layer disposed on the organic semiconductor layer, a second metal layer disposed on the first metal layer, and a third metal layer disposed on the second metal layer, wherein
• a work function of the first metal layer and the third metal layer is larger than a work function of the second metal layer.