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US 2010/0301308 A1Published application
Photodetectors
AssigneeUniversity of Seoul Industry Cooperation Foundation
InventorDoyeol AHN
Life of this patent
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Abstract
Implementations of quantum well photodetectors are provided. In one embodiment, a quantum structure includes a first barrier layer, a well layer located on the first barrier layer, and a second barrier layer located on the well layer. A metal layer is located adjacent to the quantum structure.
Claims23
A device comprising:
- a quantum structure comprising:
- a first barrier layer;
- a well layer located on the first barrier layer;
- and
- a second barrier layer located on the well layer;
- and
- a metal layer located adjacent to the quantum structure.
4 more elements
A method comprising:
- forming a quantum structure by:
- forming a first barrier layer;
- forming a well layer on the first barrier layer;
- and
- forming a second barrier layer on the well layer;
- removing a part of the quantum structure until the quantum structure has a predetermined width;
- and
- forming a metal layer adjacent to the quantum structure.
5 more elements
A method comprising:
- forming a quantum structure by:
- forming a first barrier layer;
- forming a well layer on the first barrier layer;
- and
- forming a second barrier layer on the well layer;
- and
- forming a metal layer on the quantum structure,
- wherein the metal layer has a width less than a width of the quantum structure.
5 more elements
Dependencies are inferred from the claim text.