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US 2010/0301302 A1Published application
Phase change memory device having buried conduction lines directly underneath phase change memory cells and fabrication method thereof
AssigneeHynix Semiconductor Inc.
InventorKi Ho YANG
Life of this patent
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Abstract
A phase change memory device having buried conduction lines directly underneath phase change memory cells is presented. The phase change memory device includes buried conduction lines buried in a semiconductor substrate and phase change memory cells arranged on top of the buried conductive lines. By having the buried conduction lines directly underneath the phase change memory cells, the resultant device can realize a considerable reduction in size.
Claims10
A phase change memory device comprising:
- buried conduction lines buried in a semiconductor substrate;
- and
- phase change memory cells on the buried conductive lines.
A phase change memory device, comprising:
- an isolation layer formed in a semiconductor substrate;
- buried conduction lines in portions of the semiconductor substrate defined by the isolation layer such that upper surfaces of the buried conduction lines are exposed;
- and
- switching devices on the buried conduction lines.
1 more element
A method for manufacturing a phase change memory device, comprising:
- providing a semiconductor substrate which active regions are defined therein;
- forming trenches in the active regions of the semiconductor substrate;
- forming buried conduction lines by filling in the trenches with a conduction layer;
- and
- forming phase change memory cells on the buried conduction lines.
2 more elements
Dependencies are inferred from the claim text.