Shorten Temperature Recovery Time of Low Temperature Ion Implantation
OwnerShih-Yung Shieh, Cheng-Hui Sheninventors
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Abstract
The present invention discloses a low temperature ion implantation by performing a heating process after the end of an implanting process and before the wafer is moved into the external environment. This invention actively raises wafer temperature at a time no later than implementation of the vacuum venting process, such that the condensed moisture induced by the temperature difference between a vacuum environment inside ion implanter and an external environment outside ion implanter is effectively minimized. The wafer can be heated at a loadlock, a robot for transferring wafer and/or an implantation chamber. The wafer can be heated by a gas, a liquid, a light and/or a heater embedded in a holder for holding the wafer.
Claims20
A method for shortening a temperature recovery time of a low temperature ion implantation, comprising:
- implanting a wafer in a vacuum environment inside of an ion implanter, wherein a temperature of said wafer is lower than a temperature of an external environment outside of said ion implanter;
- heating said wafer after said implanting process is finished;
- and
- moving said wafer out from said ion implanter after said wafer is heated.
A method for shortening a temperature recovery time of a low temperature ion implantation, comprising:
- implanting a wafer in an implantation chamber of an ion implanter;
- moving said wafer to a loadlock, which is used as an interface between a vacuum environment inside of said ion implanter and an external environment outside of said ion implanter;
- heating said wafer in said loadlock;
- and
- moving said wafer out from said ion implanter after said wafer is heated.
An ion implanter capable of shortening a temperature recovery time of a low temperature ion implantation, comprising:
- at least a loadlock, said loadlock being an interface between an external environment outside of said ion implanter and an internal vacuum environment inside of said ion implanter;
- an implantation chamber where a low temperature ion implantation is performed;
- a robot capable of transferring a wafer between said loadlock and said implantation chamber;
- and
- a heating mechanism capable of heating said wafer inside of said ion implanter.
Dependencies are inferred from the claim text.