ETCHANT COMPOSITIONS AND ETCHING METHOD FOR METALS Cu/Mo
AssigneeBASF SE
InventorsCheng Wei Lin, Mo Hsun Tsai
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Abstract
The present invention provides an etchant composition suitable for etching metals Cu/Mo, wherein the composition comprises 1 to 25 wt % of hydrogen peroxide on the basis of the total weight of the composition; 0.1 to 15 wt % of amino acid on the basis of the total weight of the composition; 0.1 to 15 wt % of a pH stabilizer on the basis of the total weight of the composition; 0.01 to 2 wt % of fluorine-containing acid on the basis of the total weight of the composition; 0.01 to 3 wt % of an acidic pH adjuster on the basis of the total weight of the composition; and an aqueous medium. The present invention also provides a process for etching metals Cu/Mo with the etchant composition of the present invention.
Claims14
An etchant composition suitable for etching Cu/Mo metals, comprising, on the basis of the total weight of the composition:
- 1 to 25 wt % of hydrogen peroxide;
- 0.1 to 15 wt % of amino acid;
- 0.1 to 15 wt % of a pH stabilizer;
- 0.01 to 2 wt % of fluorine-containing acid;
- 0.01 to 3 wt % of an acidic pH adjuster;
- and
- an aqueous medium.
Dependencies are inferred from the claim text.