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US 2010/0300623 A1Published application
Plasma etching apparatus
AssigneesKabushiki Kaisha Toshiba, Shibaura Mechatronics Corporation
InventorsTakeharu Motokawa, Hidehito Azumano
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Abstract
According to one embodiment, a plasma etching apparatus includes an electrode to which a high-frequency voltage is applied, having an upper surface along which a processing target substrate is to be placed, and having an inclined side, and an electrode cover provided along the side of the electrode.
Claims14
A plasma etching apparatus comprising:
- an electrode to which a high-frequency voltage is applied, having an upper surface along which a processing target substrate is to be placed, and having an inclined side;
- and
- an electrode cover provided along the side of the electrode.
Dependencies are inferred from the claim text.