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US 2010/0300495 A1Published application
Method for purifying polycrystalline silicon
AssigneeWacker Chemie AG
InventorsHanns Wochner, Christian Gossmann, Herbert Lindner
Life of this patent
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Abstract
Polysilicon fragments are purified to remove metal contaminates by contacting the fragments with a purifying liquid at a flow rate >100 mm/sec. Effective removal without abrasion is accomplished.
Claims10
-9. (canceled)
A method for purifying polysilicon fragments in an etching tank, comprising impinging a purifying liquid in at least one of the process steps onto the surface of the surface of the polysilicon fragments from more than two different directions at a flow velocity of greater than 100 mm/sec.
Dependencies are inferred from the claim text.