Compound semiconductor substrate production method
AssigneeHitachi Cable, Ltd.
InventorYuichi Oshima
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Abstract
A method of making a compound semiconductor substrate includes providing a GaN compound semiconductor single crystal ingot, and cutting the ingot with a cutter to form a GaN single crystal substrate. The cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 160° C. such that a cut surface of the GaN single crystal substrate has an arithmetical mean waviness (Wa) not more than 9 μm.
Claims6
A method of making a compound semiconductor substrate, comprising:
- providing a GaN compound semiconductor single crystal ingot;
- and
- cutting the ingot with a cutter to form a GaN single crystal substrate,
- wherein the cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 160° C.
A method of making a compound semiconductor substrate, comprising:
- providing an AlN compound semiconductor single crystal ingot;
- and
- cutting the ingot with a cutter to form an AlN single crystal substrate,
- wherein the cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 200° C.
A method of making a compound semiconductor substrate, comprising:
- providing a SiC compound semiconductor single crystal ingot;
- and
- cutting the ingot with a cutter to form a SiC single crystal substrate,
- wherein the cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 240° C.
Dependencies are inferred from the claim text.