Nanotube memory cell with floating gate based on passivated nanoparticles and manufacturing process thereof

A method for manufacturing a nanotube non-volatile memory cell including the steps of:

• forming a source electrode and a drain electrode,
• forming a nanotube implementing a conduction channel between the source electrode and the drain electrode,
• forming an insulated floating gate for storing electric charges by passivating conductive nanoparticles with passivation molecules and arranging a disposition of passivated conductive nanoparticles on the nanotube, the conductive nanoparticles being adapted to store the electric charges and being insulated by the passivation molecules from the nanotube, and
• forming a control gate coupled with the channel, the control gate disposed under the nanotube;
• wherein the step of forming the disposition of passivated conductive nanoparticles includes:
• adsorpting the passivated conductive nanoparticles on the nanotube and functionalizing the passivated conductive nanoparticles and/or the nanotube for facilitating the adsorption;
• and
• wherein the passivation molecules include hydrocarburic or aromatic thiols with pending aryl, pyrenyl, antracenyl, fenantrenyl or fullerenic groups.

A method for manufacturing a nanotube non-volatile memory cell including the steps of:

• forming a source electrode and a drain electrode,
• forming a nanotube implementing a conduction channel between the source electrode and the drain electrode,
• forming an insulated floating gate for storing electric charges by passivating conductive nanoparticles with passivation molecules and arranging a disposition of passivated conductive nanoparticles on the nanotube, the conductive nanoparticles being adapted to store the electric charges and being insulated by the passivation molecules from the nanotube, and
• forming a control gate coupled with the channel;
• wherein the step of forming the control gate includes:
• forming a layer of polymer electrolyte on the disposition of passivated conductive nanoparticles, the conductive nanoparticles being insulated by the passivation molecules from the layer of polymer electrolyte.

A nanotube non-volatile memory cell including:

• a source electrode and a drain electrode;
• a nanotube implementing a conduction channel between the source electrode and the drain electrode;
• an insulated floating gate for storing electric charges formed by a disposition of conductive nanoparticles passivated with passivation molecules being arranged in an adsorpted manner on the nanotube, the conductive nanoparticles being adapted to store the electric charges and being insulated by the passivation molecules from the nanotube;
• and
• a control gate coupled with the channel, the control gate having no portion disposed adjacent to the source electrode or the drain electrode.

A nanotube non-volatile memory cell including:

• a source electrode and a drain electrode;
• a nanotube implementing a conduction channel between the source electrode and the drain electrode;
• an insulated floating gate for storing electric charges formed by a disposition of adsorpted conductive nanoparticles passivated with passivation molecules being arranged on the nanotube, the conductive nanoparticles being adapted to store the electric charges and being insulated by the passivation molecules from the nanotube;
• and
• a control gate coupled with the channel and disposed under the nanotube;
• wherein the passivated conductive nanoparticles are adsorpted on the nanotube such that the passivated conductive nanoparticles and/or the nanotube are functionalized for facilitating the adsorption;
• and
• wherein the passivation molecules include hydrocarburic or aromatic thiols with pending aryl, pyrenyl, antracenyl, fenantrenyl or fullerenic groups.

A nanotube non-volatile memory cell including:

• a source electrode and a drain electrode;
• a nanotube implementing a conduction channel between the source electrode and the drain electrode;
• an insulated floating gate for storing electric charges formed by a disposition of conductive nanoparticles passivated with passivation molecules being arranged on the nanotube, the conductive nanoparticles being adapted to store the electric charges and being insulated by the passivation molecules from the nanotube;
• and
• a control gate coupled with the channel;
• wherein the control gate includes:
• a layer of polymer electrolyte formed on the disposition of passivated conductive nanoparticles, the conductive nanoparticles being insulated by the passivation molecules from the layer of polymer electrolyte.

A non-volatile memory, comprising:

• first and second source/drain regions comprising metal;
• a nanotube disposed between the first and second source/drain regions;
• a floating gate disposed adjacent to the nanotube, the floating gate including,
• adsorpted conductive nanoparticles, and
• electrically insulating molecules disposed between the nanotube and the nanoparticles;
• and
• a control gate disposed adjacent to the nanotube and not adjacent to the first and second source/drain regions.

A non-volatile memory, comprising:

• first and second source/drain regions;
• a nanotube disposed between the first and second source/drain regions;
• a floating gate disposed adjacent to the nanotube, the floating gate including,
• conductive nanoparticles,
• electrically insulating molecules disposed between the nanotube and the nanoparticles;
• a control gate disposed adjacent to the nanotube;
• and
• a semiconductor substrate;
• wherein the first and second drain/source regions and the nanotube are disposed over the substrate;
• wherein the floating gate is disposed over the nanotube;
• and
• wherein the control gate is disposed in the substrate beneath the nanotube.

A non-volatile memory, comprising:

• first and second source/drain regions;
• a nanotube disposed between the first and second source/drain regions;
• a floating gate disposed adjacent to the nanotube, the floating gate including,
• conductive nanoparticles,
• electrically insulating molecules disposed between the nanotube and the nanoparticles;
• a control gate disposed adjacent to the nanotube;
• a semiconductor substrate;
• an electrically insulating layer disposed on the substrate;
• wherein the nanotube is disposed over the insulator layer;
• wherein the first and second drain/source regions are disposed over the substrate;
• wherein the floating gate is disposed over the nanotube;
• and
• wherein the control gate is disposed in the substrate beneath the insulating layer.

An electronic system, comprising:

• a non-volatile memory, comprising,
• first and second source/drain regions comprising metal,
• a nanotube disposed between the first and second source/drain regions,
• a floating gate disposed adjacent to the nanotube, the floating gate including,
• adsorpted conductive nanoparticles, and
• electrically insulating molecules disposed between the nanotube and the nanoparticles;
• and
• a control gate disposed adjacent to the nanotube in the substrate.

A method, comprising:

• forming a nanotube between first and second source/drain regions;
• forming adjacent to the nanotube a floating gate having adsorpted conductive nanoparticles and electrically insulating molecules between the nanotube and the nanoparticles;
• and
• forming a control gate adjacent to the nanotube such that the control gate includes no portion adjacent to the first and second source/drain regions.

A method, comprising:

• forming a nanotube between first and second source/drain regions;
• forming adjacent to the nanotube a floating gate having conductive nanoparticles and electrically insulating molecules between the nanotube and the nanoparticles;
• and
• forming a control gate adjacent to the nanotube;
• wherein:
• forming the nanotube comprises forming the nanotube over a substrate;
• forming the floating gate comprises forming the floating gate over the nanotube;
• and
• forming the control gate comprises forming the control gate in the substrate beneath the nanotube.

A method, comprising:

• forming a nanotube between first and second source/drain regions;
• forming adjacent to the nanotube a floating gate having conductive nanoparticles and electrically insulating molecules between the nanotube and the nanoparticles;
• forming a control gate adjacent to the nanotube;
• and
• forming a insulating layer in a substrate;
• wherein forming the nanotube comprises forming the nanotube over the insulating layer;
• wherein forming the floating gate comprises forming the floating gate over the nanotube;
• and
• wherein forming the control gate comprises forming the control gate in the substrate beneath the insulating layer.