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AssigneeThe University of North Carolina at Charlotte
InventorMohamed-Ali Hasan
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The present invention relates to alternative methods for the production of crystalline silicon compounds and/or alloys such as silicon carbide layers and substrates. In one embodiment, a method of the present invention comprises heating a porous silicon deposition surface of a porous silicon substrate to a temperature operable for epitaxial deposition of at least one atom or molecule, contacting the porous silicon deposition surface with a reactive gas mixture comprising at least one chemical species comprising a group IV element and at least one silicon chemical species, and depositing a silicon-group IV element layer on the porous silicon deposition surface. In another embodiment, the chemical species comprising a group IV element can be replaced with a transition metal species to form a silicon silicide layer.
A method for the production of a silicon silicide layer comprising:
The method of claim 16, wherein the transition metal comprises titanium, chromium, iron, cobalt, nickel, palladium, platinum, or molybdenum.
The method of claim 16, further comprising separating the silicon silicide layer from the porous silicon substrate.
The method of claim 16, further comprising processing the silicon silicide layer to form silicon silicide semiconductor devices.
The method of claim 18, further comprising processing the silicon silicide layer to form silicon silicide semiconductor devices.
Dependencies are inferred from the claim text.