Electron beam apparatus and image display apparatus using the same
AssigneeCanon Kabushiki Kaisha
InventorsTakanori Suwa, Hisanobu Azuma, Toshiharu Sumiya
Life of this patent
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Abstract
Deformation of a gate by Coulomb force generated when operating an electron-emitting device is inhibited by appropriately maintaining relationship between film thickness h of the gate and distance L from an outer surface of an insulating member to an inner surface of a concave portion. According to this, in an electron beam apparatus provided with a laminate-type electron-emitting device, the deformation of the gate is prevented to reduce variation in electron emission characteristics, thereby preventing the element from being broken.
Claims4
An electron beam apparatus, comprising:
- an insulating member having a concave portion on a surface thereof;
- a gate located on the surface of the insulating member;
- a cathode having a protrusion portion protruding from an edge of the concave portion toward the gate, the protrusion portion located on the surface of the insulating member so as to be opposed to the gate;
- and
- an anode arranged so as to be opposed to the protrusion portion with the gate interposed between the protrusion and the anode,
- wherein following conditions are satisfied:
- L/h≦0.8×((2×d3×Y)/(27×c1×ε0×(d×X/T2)×Vf2))1.0/3 and
- 2.7×T2≦L,
- where,
- ε0 [F/m] is the vacuum permittivity,
- Y [Pa] is a Young's modulus of the gate,
- Vf [V] is voltage to be applied between the gate and the cathode,
- d [m] is minimum distance between the gate and the protrusion of the cathode,
- day [m] is an average value of the distance between the gate and the protrusion of the cathode,
- a load coefficient c1=0.94×(d/dav)1.78,
- h [m] is film thickness of the gate,
- T2 [m] is thickness of a portion having the concave portion of the insulating member,
- L [m] is distance from an outer surface of the gate to an inner surface of the concave portion, and
- X [m] is intruding distance of the cathode into the concave portion.
An electron beam apparatus, comprising:
- an insulating member having a concave portion on a surface thereof;
- a gate located on the surface of the insulating member;
- a cathode having a protrusion portion protruding from an edge of the concave portion toward the gate, the protrusion portion located on the surface of the insulating member so as to be opposed to the gate;
- and
- an anode arranged so as to be opposed to the protrusion portion with the gate interposed between the protrusion and the anode,
- wherein following conditions are satisfied:
- L≦0.8×((2×d3×Y)/(27×c1×ε0×(d×X/T2)×Vf2))1.0/3×h1×(0.5+0.5×(h2/h1)0.5) and
- 2.7×T2≦L,
- where,
- ε0 [F/m] is a vacuum permittivity,
- Y [Pa] is a Young's modulus of the gate,
- Vf [V] is voltage to be applied between the gate and the cathode,
- d [m] is minimum distance between the gate and the protrusion,
- dav [m] is an average value of the distance between the gate and the protrusion,
- a load coefficient c1=0.94×(d/dav)1.78,
- h1 [m] is film thickness on a position on an inner surface of the concave portion of the gate,
- h2 [m] is film thickness on an outer surface of the gate,
- T2 [m] is thickness of a portion having the concave portion of the insulating member,
- L [m] is distance from an outer surface of the gate to an inner surface of the concave portion, and
- X [m] is intruding distance of the cathode into the concave portion.
Dependencies are inferred from the claim text.