Devices Comprising Carbon Nanotubes, And Methods Of Forming Devices Comprising Carbon Nanotubes

A memory device, comprising:

• a plurality of crossed carbon nanotubes over a substrate, an undulating upper topography extending across the carbon nanotubes and within spaces between the carbon nanotubes, the spaces having maximum lateral widths, a global maximum lateral width being the greatest lateral width of any of the spaces and being a mesh width;
• a plurality of metallic particles over the crossed carbon nanotubes;
• the metallic particles being too large to pass entirely through the mesh width;
• and
• wherein the memory device comprises no metallic particles small enough to pass through the mesh width, and that are within the crossed carbon nanotubes.

A method of forming a device, comprising:

• providing a carbon nanotube-containing structure across a substrate, the structure comprising a plurality of carbon nanotubes;
• forming a protective material over the carbon nanotube-containing structure;
• after forming the protective material;
• etching an opening through the protective material to expose a region of the carbon nanotube-containing structure;
• at least partially filling the opening with electrically conductive material to form an electrode over and in direct physical contact with the carbon nanotube-containing structure;
• and
• wherein the etching of the opening, and the at least partially filling of the opening, are conducted in a sealed chamber under an atmosphere that is inert relative to reaction with the carbon nanotubes.