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US 2010/0266787 A1Published application
Oxide material and sputtering target
AssigneeThales
InventorsKoki Yano, Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka
Life of this patent
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Abstract
An oxide material including indium (In), tin (Sn), and metal element M, and including an ilmenite structure compound; a sputtering target composed thereof; a transparent conductive film formed by using such a sputtering target; and a transparent electrode composed of such a transparent conductive film.
Claims13
An oxide material comprising indium (In), tin (Sn), and metal element M, and comprising an ilmenite structure compound.
A method for producing an oxide material comprising an ilmenite structure compound, which comprises heating raw materials at a temperature of 700° C. or higher;
- the raw materials being a tin compound, and an indium compound, and a compound of metal element M;
- an atomic ratio of indium (In/(In+Sn+M)) being 0.25 to 0.55 and an atomic ratio of tin (Sn/(In+Sn+M)) being 0.25 to 0.5 in the total amount of the raw materials.
Dependencies are inferred from the claim text.