Under-gate field emission triode with charge dissipation layer
AssigneeE.I. du Pont de Nemours and Company
InventorsAdam Fennimore, Lap-Tak Andrew Cheng
Life of this patent
Estimating the term…
Abstract
Under-gate field emission triode devices, and cathode assemblies for use therein, contain a charge dissipation layer. The charge dissipation layer may be located under or over the cathode electrode and/or electron field emitter.
Claims20
A field emission triode device comprising (a) a cathode assembly comprising (i) a substrate, (ii) a conductive gate electrode disposed on the substrate, (iii) an insulating layer disposed on the gate electrode, (iv) a charge dissipation layer having an electrical sheet resistance between about 1×1010 and about 1×1014 ohms per square disposed on the insulating layer, (v) a cathode electrode disposed on the charge dissipation layer, and (vi) an electron field emitter in contact with the cathode electrode;
- and (b) an anode.
A field emission triode device comprising (a) a cathode assembly comprising (i) a substrate, (ii) a conductive gate electrode disposed on the substrate, (iii) an insulating layer disposed on the gate electrode, (iv) a cathode electrode disposed on the insulating layer, (v) a charge dissipation layer having an electrical sheet resistance between about 1×1010 and about 1×1014 ohms per square disposed on the cathode electrode and the insulating layer, and (vi) an electron field emitter disposed on the charge dissipation layer;
- and (b) an anode.
A field emission triode device comprising (a) a cathode assembly comprising (i) a substrate, (ii) a conductive gate electrode disposed on the substrate, (iii) an insulating layer disposed on the gate electrode, (iv) a cathode electrode disposed on the insulating layer, (v) an electron field emitter in contact with the cathode, and (vi) a charge dissipation layer having an electrical sheet resistance between about 1×1010 and about 1×1014 ohms per square disposed on the insulating layer, the cathode electrode and the electron field emitter;
- and (b) an anode.
A cathode assembly comprising (a) a substrate, (ii) a conductive gate electrode disposed on the substrate, (iii) an insulating layer disposed on the gate electrode, (iv) a charge dissipation layer having an electrical sheet resistance between about 1×1010 and about 1×1014 ohms per square disposed on the insulating layer, (v) a cathode electrode disposed on the charge dissipation layer, and (vi) an electron field emitter in contact with the cathode electrode.
A cathode assembly comprising (i) a substrate, (ii) a conductive gate electrode disposed on the substrate, (iii) an insulating layer disposed on the gate electrode, (iv) a cathode electrode disposed on the insulating layer, (v) a charge dissipation layer having an electrical sheet resistance between about 1×1010 and about 1×1014 ohms per square disposed on the cathode electrode and the insulating layer, and (vi) an electron field emitter disposed on the charge dissipation layer.
A cathode assembly comprising (i) a substrate, (ii) a conductive gate electrode disposed on the substrate, (iii) an insulating layer disposed on the gate electrode, (iv) a cathode electrode disposed on the insulating layer, (v) an electron field emitter in contact with the cathode, and (vi) a charge dissipation layer having an electrical sheet resistance between about 1×1010 and about 1×1014 ohms per square disposed on the insulating layer, the cathode electrode and the electron field emitter.
Dependencies are inferred from the claim text.