Group iii nitride crystal, method for growing the group iii nitride crystal, and apparatus for growing the same
AssigneePanasonic Corporation
InventorsHisashi Minemoto, Osamu Yamada, Takeshi Hatakeyama, Hiroaki Hoshikawa, Yasunori Tokunou
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Abstract
When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an x-axis and a Y-axis.
Claims38
A method for growing a group III nitride crystal, wherein when a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt comprising at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel that holds the melt is swung about two axes different in direction from each other.
An apparatus for growing a group III nitride crystal, the apparatus comprising a pressure vessel, a melt-holding vessel disposed in the pressure vessel, a gas feeder and a gas pipe for feeding a nitrogen-containing gas into the melt-holding vessel, and a heater for heating the melt-holding vessel, and the apparatus growing a group III nitride crystal by forming a nitrogen-containing melt in a pressurized atmosphere of the nitrogen-containing gas in the melt-holding vessel disposed in the pressure vessel with at least a group III element and an alkali metal or an alkali earth metal placed in the melt-holding vessel, wherein the apparatus further comprises a swing unit for swinging the melt-holding vessel about two axes different in direction from each other.
Dependencies are inferred from the claim text.