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US 2010/0248485 A1Published application
Method for dielectric material removal between conductive lines
AssigneeLam Research Corporation
InventorsMayumi Block, Robert C. Hefty, Stephen M. Sirard, Kenji Takeshita
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Abstract
A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.
Claims19
A method for removing carbon doped silicon oxide between metal contacts, comprising:
- (a) converting a layer of the carbon doped silicon oxide to a layer of silicon oxide by removing the carbon dopant;
- and
- (b) selectively wet etching the converted layer of silicon oxide with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.
A method for removing carbon doped silicon oxide between metal contacts, comprising:
- (a) converting a layer of the carbon doped silicon oxide to a layer of silicon oxide by removing the carbon dopant;
- (b) selectively wet etching the converted layer of silicon oxide with respect to the carbon doped silicon oxide, using an etchant comprising hydrogen fluoride, which forms recess between the metal contacts with an aspect ratio of at least 1, wherein the metal contact is exposed to the wet etch;
- and
- (c) dry etching the carbon doped silicon oxide using the metal contacts as a mask after the wet etching to form the recesses into features.
1 more element
Dependencies are inferred from the claim text.