Method of manufacturing semiconductor device, template, and method of creating pattern inspection data
AssigneeKabushiki Kaisha Toshiba
InventorKoji HASHIMOTO
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Abstract
A method of manufacturing a semiconductor device according to an embodiment of the present invention includes mask layer on a processing target, pressing a template having a pattern having closed loop structure against the mask layer via an imprint material to solidify the imprint material, etching the mask layer by using the imprint material to form a mask, removing a part of the pattern having the closed loop of the mask, and etching the processing target by the mask including the pattern, the part of which is removed.
Claims20
A method of manufacturing a semiconductor device comprising:
- forming a first mask layer on a processing target;
- pressing a template having a first pattern having closed loop structure against the first mask layer via an imprint material and solidifying the imprint material to perform imprint;
- etching the first mask layer using the solidified imprint material as a mask to form a first mask including a second pattern having the closed loop structure;
- forming a first processing pattern above the first mask;
- performing, using the first processing pattern, removal of the closed loop structure by removing a part of the second pattern of the first mask to form a second mask;
- and
- etching the processing target using the second mask including the second pattern, the part of which is removed.
A template used in imprint lithography, wherein the template has a first pattern having closed loop structure, the first pattern being used for forming a device pattern.
A method of creating pattern inspection data used in inspecting a pattern formed on a template used in imprint lithography or a second pattern formed by using the template, the method of creating pattern inspection data comprising:
- creating bias data in which an outer periphery of a pattern of rendering data for forming a template having a first pattern having close loop structure is moved in any one of an outward direction and an inward direction or both by a predetermined bias amount;
- and
- calculating, when two bias data are created by moving the outer periphery of the pattern in both the outward direction and the inward direction by the predetermined amount, a difference between two bias data and calculating, when one bias data is created by moving the outer periphery of the pattern in one of the outward direction and the inward direction by the predetermined amount, a difference between the bias data and the rendering data of the pattern to create first pattern inspection data.
Dependencies are inferred from the claim text.