Method of processing a surface of group iii nitride crystal and group iii nitride crystal substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorsTakayuki NISHIURA, Keiji Ishibashi
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AssigneeSumitomo Electric Industries, Ltd.
InventorsTakayuki NISHIURA, Keiji Ishibashi
Estimating the term…
There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains.
A method of processing a surface of a group III nitride crystal, comprising the steps of:
(canceled)
Dependencies are inferred from the claim text.