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US 2010/0248475 A1Published application
Method of fabricating a semiconductor device
AssigneeInfineon Technologies AG
InventorsManfred Mengel, Thomas Spoettl, Frank Pueschner
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Abstract
A method of fabricating a semiconductor device is disclosed. In one embodiment, the method includes providing at least one semiconductor chip including an electrically conductive layer. A voltage is applied to an electrode. The electrode is moved over the electrically conductive layer for growing a metal layer onto the electrically conductive layer.
Claims25
A method of fabricating a semiconductor device, comprising:
- providing at least one semiconductor chip comprising an electrically conductive layer;
- applying a voltage to an electrode;
- and
- moving the electrode over the electrically conductive layer for growing a metal layer onto the electrically conductive layer.
1 more element
A method of fabricating a semiconductor device, comprising:
- providing at least one semiconductor chip comprising an electrically conductive layer;
- and
- growing a metal layer onto the electrically conductive layer by galvanic roll plating.
A method of fabricating a semiconductor device, comprising:
- providing at least one semiconductor chip comprising an electrically conductive layer;
- and
- growing a metal layer onto the electrically conductive layer by galvanic roll plating, comprising applying a voltage to a first electrode;
- positioning a second electrode in a distance to the electrically conductive layer;
- applying a metal ion containing solution to the electrically conductive layer;
- and
- rolling the first electrode over the electrically conductive layer.
4 more elements
Dependencies are inferred from the claim text.