Methods Of Forming Copper-Comprising Conductive Lines In The Fabrication Of Integrated Circuitry

A method of forming copper-comprising conductive lines in the fabrication of integrated circuitry, comprising:

• depositing conductor material over dielectric material of a substrate;
• depositing damascene material over the conductor material, the damascene material being at least one of insulative or semiconductive;
• forming line trenches into the damascene material;
• electrochemically depositing conductive copper-comprising material over the damascene material and to within the line trenches;
• removing conductive copper-comprising material and exposing the damascene material and forming individual copper-comprising conductive lines within individual of the line trenches, the conductor material extending laterally between and electrically interconnecting adjacent of the individual copper-comprising conductive lines;
• after exposing the damascene material, removing the damascene material selectively relative to the conductive copper-comprising material and the conductor material;
• after removing the damascene material, removing the conductor material from extending laterally between and electrically interconnecting adjacent of the individual copper-comprising conductive lines, the conductor material remaining elevationally between the individual copper-comprising conductive lines and the substrate;
• and
• after removing the conductor material, depositing dielectric material laterally between adjacent of the individual copper-comprising conductive lines.

A method of forming copper-comprising conductive lines in the fabrication of integrated circuitry, comprising:

• depositing conductive damascene material over dielectric material of a substrate;
• forming line trenches into the conductive damascene material which extend only partially through the conductive damascene material;
• electrochemically depositing conductive copper-comprising material over the conductive damascene material and to within the line trenches;
• removing conductive copper-comprising material and exposing the conductive damascene material and forming individual copper-comprising conductive lines within individual of the line trenches;
• after exposing the conductive damascene material, removing the conductive damascene material selectively relative to the conductive copper-comprising material, the conductive damascene material remaining elevationally between the individual copper-comprising conductive lines and the substrate;
• and
• after removing the conductive damascene material, depositing dielectric material laterally between adjacent of the individual copper-comprising conductive lines.

A method of forming copper-comprising conductive lines in the fabrication of integrated circuitry, comprising:

• depositing damascene material over dielectric material of a substrate, the damascene material being at least one of insulative or semiconductive;
• forming line trenches into the damascene material;
• electrochemically depositing conductive copper-comprising material over the damascene material and to within the line trenches, the electrochemical depositing comprising forming parallel circuit conducting paths, one of said paths being outward of the damascene material, another of said paths being inward of the damascene material;
• and
• removing conductive copper-comprising material and exposing the damascene material and forming individual copper-comprising conductive lines within individual of the line trenches.