Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorDae-ik Kim
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Abstract
A semiconductor device and method of fabricating the same reduce the likelihood of the occurrence of electrical defects. The device includes a first interlayer insulating film on a semiconductor substrate; a contact pad spacer on the first interlayer insulating film; and a contact pad in the first interlayer insulating film and the contact pad spacer. The cross-sectional area of an upper portion of the contact pad in the contact pad spacer in a direction horizontal to the substrate is equal to or less than a cross-sectional area of an intermediate portion at an interface between the contact pad spacer and the first interlayer insulating film in a direction horizontal to the substrate.
Claims14
A method of fabricating a semiconductor device, the method comprising:
- forming a first interlayer insulating film on a semiconductor substrate;
- forming a contact pad in the first interlayer insulating film;
- exposing an upper portion of the contact pad by partially recessing the first interlayer insulating film;
- and
- reducing the upper portion of the contact pad in size by reducing a size of the exposed contact pad.
Dependencies are inferred from the claim text.