Method of growing GaN using CVD and HVPE
AssigneesNational Sun Yat-Sen University, Sino American Silicon Prouducts Inc.
InventorsMitch M. C. Chou, Wen-Ching Hsu
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Abstract
A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.
Claims5
A method of growing gallium nitride (GaN) using a chemical vapor deposition (CVD) and a hydride vapor phase epitaxy (HVPE), comprising steps of:
- (a) obtaining a substrate made of LiAlO2 and a reactor device;
- (b) deposing said LiAlO2 substrate on a seat, deposing a gallium (Ga) metal in a movable boat, flowing at least a gas into said reactor device, and processing said CVD in said reactor device under a high temperature to deposit a GaN nanostructure on said LiAlO2 substrate;
- and
- (c) processing said LiAlO2 substrate through said HVPE in said reactor device with said GaN having said nanostructure as nucleus sites to obtain a thick GaN film by adjusting a temperature and a flow speed of said gas.
Dependencies are inferred from the claim text.