Method of forming information storage pattern

A method of forming an information storage pattern, comprising:

• placing a semiconductor substrate in a process chamber of semiconductor deposition equipment;
• injecting first, second and third process gases into the process chamber during a first process to form a lower layer on the semiconductor substrate in accordance with a first injection time and/or a first pause time;
• injecting the second process gas into the process chamber during a second process, wherein the second process gas is injected into the process chamber during a first elimination time after completing the first process;
• injecting a fourth process gas together with the second and third process gases into the process chamber during a third process in accordance with a second injection time and/or a second pause time to form an upper layer on the lower layer;
• and
• injecting the second process gas into the process chamber during a fourth process, wherein the second process gas is injected into the process chamber during a second elimination time after completing the third process.