Method for fabricating semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorsIsao Makabe, Ken Nakata, Tsuyoshi Kouchi
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Abstract
A method for fabricating a semiconductor device including: cleaning an apparatus used to grow a layer including Ga; performing a first step of forming a first layer on a substrate made of silicon by using the apparatus, the first layer including a nitride semiconductor that does not include Ga as a composition element and has a Ga impurity concentration of 2×1018 atoms/cm3 or less; and performing a second step of forming a second layer on the first layer by using the apparatus after the first step is repeatedly carried out multiple times, the second layer including a nitride semiconductor including Ga.
Claims20
A method for fabricating a semiconductor device comprising:
- cleaning an apparatus used to grow a layer including Ga;
- performing a first step of forming a first layer on a substrate made of silicon by using the apparatus, the first layer including a nitride semiconductor that does not include Ga as a composition element and has a Ga impurity concentration of 2×1018 atoms/cm3 or less;
- and
- performing a second step of forming a second layer on the first layer by using the apparatus after the first step is repeatedly carried out multiple times, the second layer including a nitride semiconductor including Ga.
A method for fabricating a semiconductor device comprising:
- performing a first step of forming a first layer on a substrate made of silicon by using an apparatus, the first layer including a nitride semiconductor that does not include Ga as a composition element and has a Ga impurity concentration of 2×1018 atoms/cm3 or less;
- and
- performing a second step of forming a second layer on the first layer by using another apparatus, the second layer including a nitride semiconductor including Ga.
Dependencies are inferred from the claim text.