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US 2010/0248456 A1Published application
Method of manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorKeisuke Otsuka
Life of this patent
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Abstract
A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first etching process is performed to etch a layer using a resist mask and a hard mask. The resist mask covers the hard mask. The hard mask covers the layer. Then, a second etching process is performed to etch the layer using the hard mask, substantially in the absence of the resist mask.
Claims20
A method of manufacturing a semiconductor device, comprising:
- performing a first etching process that etches a layer using a resist mask and a hard mask, the resist mask covering the hard mask, and the hard mask covering the layer;
- and
- performing a second etching process that etches the layer using the hard mask, substantially in the absence of the resist mask.
A method of manufacturing a semiconductor device, comprising:
- forming a memory cell structure;
- forming a semiconductor layer covering the memory cell structure;
- forming a metal layer covering the semiconductor layer;
- forming a hard mask covering the metal layer;
- forming a resist mask covering the hard mask;
- performing a first etching process that etches the semiconductor layer and the metal layer using the resist mask and the hard mask;
- and
- performing a second etching process that etches the memory cell structure using the hard mask, the second etching process being performed in the absence of the resist mask.
5 more elements
A method of manufacturing a semiconductor device, comprising:
- etching a first film using a first mask and a second mask different from the first mask, the first mask covering the second mask, and the second mask covering the first film, the first film covering a second film, and at least a part of the first mask being etched by etching the first film;
- removing a remaining portion of the first mask if the remaining portion resides after etching the first film;
- and
- etching the second film using the second mask.
1 more element
Dependencies are inferred from the claim text.