Manufacturing method of group III nitride semiconductor
AssigneeToyoda Gosei Co., Ltd.
InventorKoji Okuno
Life of this patent
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Abstract
A manufacturing method of a group III nitride semiconductor comprising: preparing a substrate including a buffer layer; forming a first layer on the buffer layer from a group III nitride semiconductor by MOCVD while doping an anti-surfactant, wherein a thickness of the first layer is equal to or thinner than 2 μm; forming a second layer on the first layer from a group III nitride semiconductor by MOCVD while doping at least one of surfactant and an anti-surfactant; and controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the anti-surfactant and the surfactant doped during the formation of the second layer.
Claims17
A manufacturing method of a group III nitride semiconductor comprising:
- preparing a substrate including a buffer layer;
- forming a first layer from a group III nitride semiconductor doped with an anti-surfactant by MOCVD on the buffer layer, wherein a thickness of the first layer is equal to or thinner than 2 μm;
- forming a second layer on the first layer from a group III nitride semiconductor doped with at least one of surfactant and an anti-surfactant by MOCVD;
- and
- controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the anti-surfactant and the surfactant doped during the formation of the second layer.
A manufacturing method of a group III nitride semiconductor comprising:
- preparing a substrate including a buffer layer;
- forming a non-doped first layer from a group III nitride semiconductor by MOCVD, a thickness of the first layer equal to or thinner than 2 μm;
- forming a second layer from a group III nitride semiconductor doped with a surfactant by MOCVD.
Dependencies are inferred from the claim text.