Method of producing semiconductor device
AssigneeOki Semiconductor Co., Ltd.
InventorYoshihiro SAEKI
Life of this patent
Estimating the term…
Abstract
A method of producing a semiconductor device includes: a dicing step of dicing a wafer member using a dicing blade to form a cut portion in the wafer member, in which the wafer member is formed of a wafer portion, a glass substrate, and an adhesive layer for bonding the wafer portion and the glass substrate in a thickness direction of the wafer member so that the cut portion penetrates the wafer portion and the adhesive layer and reaches a part of the glass substrate; and an individual piece dividing step of dividing the wafer member into a plurality of semiconductor devices with the cut portion as a fracture initiation portion.
Claims3
A method of producing a semiconductor device comprising:
- a dicing step of dicing a wafer member using a dicing blade to form a cut portion in the wafer member, said wafer member being formed of a wafer portion, a glass substrate, and an adhesive layer for bonding the wafer portion and the glass substrate in a thickness direction of the wafer member so that the cut portion penetrates the wafer portion and the adhesive layer and reaches a part of the glass substrate;
- and
- an individual piece dividing step of dividing the wafer member into a plurality of semiconductor devices with the cut portion as a fracture initiation portion.
A method of producing a semiconductor device comprising:
- a fracture initiation portion forming step of forming a fracture initiation portion in a surface layer of a glass substrate of a wafer member, said wafer member being formed of a wafer portion, the glass substrate, and an adhesive layer for bonding the wafer portion and the glass substrate in a thickness direction of the wafer member so that the surface layer of the glass substrate is situated on a side opposite to the adhesive layer;
- a dicing step of dicing the wafer member along the fracture initiation portion using a dicing blade to form a cut portion in the wafer member so that the cut portion penetrates the wafer portion and the adhesive layer and reaches a part of the glass substrate toward the adhesive layer beyond the fracture initiation portion;
- and
- an individual piece dividing step of dividing the wafer member into a plurality of semiconductor devices along the fracture initiation portion and the cut portion.
A method of producing a semiconductor device comprising:
- a dicing step of dicing a wafer member using a dicing blade to form a cut portion in the wafer member, said wafer member being formed of a wafer portion, a glass substrate, and an adhesive layer for bonding the wafer portion and the glass substrate in a thickness direction of the wafer member so that the cut portion penetrates the wafer portion and the adhesive layer and reaches a part of the glass substrate;
- a fracture initiation portion forming step of forming a fracture initiation portion in a surface layer of the glass substrate on a side opposite to the adhesive layer so that the fracture initiation portion is overlapped with the cut portion in a plan view of the wafer member;
- and
- an individual piece dividing step of dividing the wafer member into a plurality of semiconductor devices along the cut portion and the fracture initiation portion.
Dependencies are inferred from the claim text.