Metal-Assisted Chemical Etching of Substrates
AssigneeGeorgia Tech Research Corporation
InventorsOwen Hildreth, C. P. Wong, Yonghao Xiu
Life of this patent
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Abstract
Disclosed herein are various embodiments related to metal-assisted chemical etching of substrates on the micron, sub-micron and nano scales. In one embodiment, among others, a method for metal-assisted chemical etching includes providing a substrate; depositing a non-spherical metal catalyst on a surface of the substrate; etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent; and removing the etched substrate from the etchant solution.
Claims20
A method for metal-assisted chemical etching, comprising:
- providing a substrate;
- depositing a non-spherical metal catalyst on a surface of the substrate;
- etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent;
- and
- removing the etched substrate from the etchant solution.
A method for dicing a substrate, comprising:
- providing the substrate;
- depositing a metal catalyst pattern on a surface of the substrate, the metal catalyst pattern corresponding to a substrate dicing pattern;
- etching the substrate by exposing the metal catalyst pattern and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent;
- and
- removing the etched substrate from the etchant solution.
Dependencies are inferred from the claim text.