Method for producing a bonded wafer
AssigneeSumco Corporation
InventorsHideki Nishihata, Nobuyuki Morimoto, Tatsumi Kusaba, Akihiko Endo
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Abstract
In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015 to 5×1016 atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.
Claims3
A method for producing a bonded wafer by bonding a wafer for active layer to a wafer for support layer through an insulating film or directly and then thinning the wafer for active layer, which comprises:
- (1) a step of implanting oxygen ions into a wafer for active layer;
- (2) a step of bonding an oxygen ion implanted side surface of the wafer for active layer to a wafer for support layer directly or through an insulating film;
- (3) a step of heat-treating for enhancing a bonding strength;
- (4) a step of thinning the wafer for active layer in the bonded wafer to expose the oxygen ion implanted layer;
- (5) a step of removing the exposed oxygen ion implanted layer;
- and
- (6) a step of planarizing and/or thinning a surface of a portion in the wafer of active layer,
- wherein in the above step (1) of implanting oxygen ions into the wafer for active layer, oxygen ions are implanted at a dose of 5×1015 to 5×1016 atoms/cm2 in a state that the temperature of the wafer for active layer is held at not higher than 200° C.
Dependencies are inferred from the claim text.