Method for manufacturing soi substrate
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Masaki Koyama, Kosei Noda, Kenichiro Makino, Hideto Ohnuma, Kosei Nei
Life of this patent
Estimating the term…
Abstract
A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured.
Claims24
A method for manufacturing an SOI substrate, comprising the steps of:
- providing a single crystal semiconductor selectively and partly over a supporting substrate with a buffer layer provided therebetween, the single crystal semiconductor separated from a single crystal semiconductor substrate;
- forming a non-single crystal semiconductor layer over the buffer layer, the non-single crystal semiconductor layer being in contact with the single crystal semiconductor;
- and
- crystallizing the non-single crystal semiconductor layer using the single crystal semiconductor as a seed crystal by laser beam irradiation.
A method for manufacturing an SOI substrate, comprising the steps of:
- irradiating a single crystal semiconductor substrate with accelerated ions to form a fragile layer in the single crystal semiconductor substrate;
- attaching the single crystal semiconductor substrate and a supporting substrate with a buffer layer provided therebetween;
- separating partly the single crystal semiconductor substrate along the fragile layer by heat treatment to form a single crystal semiconductor layer over the supporting substrate with the buffer layer provided therebetween;
- selectively etching the single crystal semiconductor layer to form a plurality of island shape single crystal semiconductors over the supporting substrate with the buffer layer provided therebetween;
- forming a non-single crystal semiconductor layer over the buffer layer, the non-single crystal semiconductor layer being in contact with the plurality of island shape single crystal semiconductors;
- and
- crystallizing the non-single crystal semiconductor layer using the plurality of island shape single crystal semiconductors as seed crystals by laser beam irradiation.
A method for manufacturing an SOI substrate, comprising the steps of:
- selectively etching a single crystal semiconductor substrate so that a surface of the single crystal semiconductor substrate has a plurality of projecting portions;
- irradiating the single crystal semiconductor substrate with accelerated ions from the surface having the plurality of projecting portions to form a plurality of fragile layers in the single crystal semiconductor substrate;
- attaching the single crystal semiconductor substrate and a supporting substrate with a buffer layer provided therebetween;
- separating partly the single crystal semiconductor substrate along the plurality of fragile layers by heat treatment to form a plurality of island shape single crystal semiconductors over the supporting substrate with the buffer layer provided therebetween;
- forming a non-single crystal semiconductor layer over the buffer layer, the non-single crystal semiconductor layer being in contact with the plurality of island shape single crystal semiconductors;
- and
- crystallizing the non-single crystal semiconductor layer using the plurality of island shape single crystal semiconductors as seed crystals by laser beam irradiation.
A method for manufacturing an SOI substrate, comprising the steps of:
- irradiating a single crystal semiconductor substrate with accelerated ions to form a fragile layer in the single crystal semiconductor substrate;
- selectively etching the single crystal semiconductor substrate so that a surface of the single crystal semiconductor substrate has a plurality of projecting portions and the fragile layer is divided into a plurality of fragile layers;
- attaching the single crystal semiconductor substrate and a supporting substrate with a buffer layer provided therebetween;
- separating partly the single crystal semiconductor substrate along the plurality of fragile layers by heat treatment to form a plurality of island shape single crystal semiconductors over the supporting substrate with the buffer layer provided therebetween;
- forming a non-single crystal semiconductor layer over the buffer layer, the non-single crystal semiconductor layer being in contact with the plurality of island shape single crystal semiconductors;
- and
- crystallizing the non-single crystal semiconductor layer using the plurality of island shape single crystal semiconductors as seed crystals by laser beam irradiation.
Dependencies are inferred from the claim text.