Back to results
US 2010/0248443 A1Published application
Method of integrating an air gap structure with a substrate
AssigneeTokyo Electron Limited
InventorsEric M. LEE, Junjun LIU, Dorel I. TOMA
Life of this patent
Estimating the term…
Abstract
A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer.
Claims20
A method for forming an air gap structure, comprising:
- depositing a sacrificial layer on a substrate, said sacrificial layer comprising a decomposable material;
- forming an adhesion-promoting layer between said sacrificial layer and said substrate;
- depositing a capping layer over said sacrificial layer;
- patterning said capping layer and said sacrificial layer to create a pattern in said capping layer and said sacrificial layer;
- metalizing said pattern formed in said capping layer and said sacrificial layer;
- decomposing said sacrificial layer by exposing said substrate to ultraviolet (UV) radiation and heating said substrate;
- and
- removing said decomposed sacrificial layer through said capping layer.
5 more elements
Dependencies are inferred from the claim text.