Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices

A method of fabricating a structure, comprising:

• forming a dielectric hardmask layer on a top surface of an upper silicon layer of a silicon-on-insulator substrate, said silicon-on-insulator substrate including a lower single-crystal silicon layer separated from said upper silicon layer by a buried oxide layer;
• simultaneously forming first sets of two or more nano-fins and second sets of two or more nano-fins on a dielectric layer, each nano-fin of each of said first and second sets of two or more nano-fins comprising an elongated block of semiconductor material extending axially along a first direction, said second sets of two or more nano-fins interdigitated with said first sets of two or more nano-fins, first ends of nano-fins of said first sets of two or more nano-fins extending past first ends of nano-fins of said second sets of two or more nano-fins in said first direction and second ends of nano-fins of said second sets of two or more nano-fins extending past second ends of nano-fins of said first sets of two or more nano-fins in said first direction;
• forming a gate dielectric on all exposed surface of said nano-fins of said first and second sets of nano-fins;
• filling all spaces between said nano-fins of said first and second sets of nano-fins with a polysilicon layer, a top surface of said polysilicon layer coplanar with a top surfaces of said hardmask layer;
• forming a gate mask on said top surface of said polysilicon layer and top surfaces of said hardmask layer, said gate mask extending over regions of said first ends of said nano-fins of said first set of nano-fins, but not over any portion of said nano-fins of said second set of nano-fins;
• and
• removing said polysilicon layer, where said polysilicon layer is not protected by said gate mask, followed by removing said hardmask layer where said hardmask layer is not protected by said gate mask, followed by removing said gate mask.