Manufacturing method for semiconductor device

A manufacturing method for a semiconductor device having a laminated structure wherein a first semiconductor element is laminated and connected to at least one of both main surfaces of a wiring circuit layer, the wiring circuit layer comprising at least a wiring part and an insulating part, wherein;

• the insulating part comprising a first adhesive layer and a second adhesive layer, the first adhesive layer being disposed on one main surface side of the wiring circuit layer and the second adhesive layer being disposed on the other main surface side, and the both main surfaces form a first adhesive surface and a second adhesive surface by the presence of first adhesive layer and the second adhesive layer, respectively, and a first connecting conductor part being exposed in at least the first adhesive surface to which the first semiconductor element is connected in a way such that an electrode of the element can be connected, and the first connecting conductor part constitutes a portion of the wiring part of the wiring circuit layer or is connected to the wiring part via a conductive path;
• the manufacturing method comprises the steps of:
• laminating a wiring circuit layer on a first metal support substrate in a way such that the wiring circuit layer can be peeled from the substrate, and that the first adhesive surface is provided on the opposite side of the wiring circuit layer from the substrate;
• bonding the first semiconductor element in a wafer state to the first adhesive surface, and simultaneously connecting an electrode of the element to the first connecting conductor part, after the laminating step;
• and
• peeling the metal support substrate from the wiring circuit layer after the bonding step.