Method of fabricating semiconductor device

A method of fabricating a semiconductor device having a plurality of light receiving elements, and having an amplifying element that amplifies an output signal from the light receiving elements, mounted on a semiconductor substrate, the method comprising:

• a) an active region forming process that forms an active region on the semiconductor substrate for configuring the amplifying element;
• b) after the active region forming process, performing a light receiving element region forming process that forms a light receiving element region on the semiconductor substrate for forming the plurality of light receiving elements, with the active region acting as a reference for positioning;
• c) after the light receiving element region forming process, performing an impurity implantation process that implants an impurity into the light receiving element region;
• d) repeating the light receiving element region forming process b) and repeating the impurity implantation process c) a number of times that equals a number of diffusion layers in the light receiving element region;
• e) after the impurity implantation process, performing a drive-in process to carry out drive in of the semiconductor substrate;
• and
• f) after the drive-in process, performing an amplifying element forming process that implants an impurity in the active region and forms the amplifying element.