US 2010/0248407 A1Published application

Method for producing group III nitride-based compound semiconductor device

AssigneeToyoda Gosei Co., Ltd.

InventorsToshiya Umemura, Ryohei Inazawa, Koichi Goshonoo, Tomoharu Shiraki

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Abstract

Provided is a method for producing a Group III nitride-based compound semiconductor light-emitting device, wherein a contact electrode is formed on an N-polar surface of an n-type layer through annealing at 350° C. or lower. In the case where, in a Group III nitride-based compound semiconductor device produced by the laser lift-off process, a contact electrode is formed, through annealing at 350° C. or lower, on a micro embossment surface (i.e., a processed N-polar surface) of an n-type layer from vanadium, chromium, tungsten, nickel, platinum, niobium, or iron, when a pseudo-silicon-heavily-doped layer is formed on the micro embossment surface (i.e., N-polar surface) of the n-type layer through treatment with a plasma of a silicon-containing compound gas, and treatment with a fluoride-ion-containing chemical is not carried out, ohmic contact is obtained, and low resistance is attained.

Claims8

Dependent claims

A method for producing a Group III nitride-based compound semiconductor light-emitting device, the method comprising:

a layer stacking step of forming an n-type layer, a light-emitting layer or an active layer, and a p-type layer sequentially on an epitaxial growth substrate formed of a hetero-substrate;
a bonding step of forming a conductive layer on a surface of the p-type layer, to thereby bond the p-type layer to a conductive support substrate;
a growth substrate removal step of removing the epitaxial growth substrate by decomposing at least a portion of the n-type layer through laser irradiation;
and
a pretreatment and electrode formation step of forming an electrode on the exposed n-type layer, wherein the pretreatment and electrode formation step comprises:
a plasma silicon doping step of doping a surface of the n-type layer with silicon by applying, to the n-type layer surface, a plasma of a silicon-containing compound formed through application of a high-frequency electric power to the conductive substrate;
a contact electrode formation stepp of forming, on the n-type layer surface, a contact electrode comprising at least one selected from a group consisting of vanadium, chromium, tungsten, nickel, platinum, niobium, and iron;
and
an alloying step of alloying the n-type layer and the contact electrode through thermal treatment at 100° C. to 350° C.

6 more elements

A method for producing a Group III nitride-based compound semiconductor light-emitting device, the method comprising:

a layer stacking step of forming an undoped layer, n-type layer, a light-emitting layer or an active layer, and a p-type layer sequentially on an epitaxial growth substrate formed of a hetero-substrate;
a bonding step of forming a conductive layer on a surface of the p-type layer, to thereby bond the p-type layer to a conductive support substrate;
a growth substrate removal step of removing the epitaxial growth substrate by decomposing at least a portion of the undoped layer through laser irradiation;
an undoped layer removal step of removing the undoped layer, to thereby expose the n-type layer;
and
a pretreatment and electrode formation step of forming an electrode on the thus-exposed n-type layer, wherein the pretreatment and electrode formation step comprises:
a plasma silicon doping step of doping a surface of the n-type layer with silicon by applying, to the n-type layer surface, a plasma of a silicon-containing compound formed through application of a high-frequency electric power to the conductive substrate;
a contact electrode formation step of forming, on the n-type layer surface, a contact electrode comprising at least one selected from a group consisting of vanadium, chromium, tungsten, nickel, platinum, niobium, and iron;
and
an alloying step of alloying the n-type layer and the contact electrode through thermal treatment at 100° C. to 350° C.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/662,067Filed 30 Mar 2010
Priority: JP 2009-08543831 Mar 2009
Published: 30 Sep 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10H 20/01
Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]: manufacture or treatment
H10H 20/816
Bodies: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers
H10H 20/82
Characterised by their shape, e.g. curved or truncated substrates: roughened surfaces, e.g. at the interface between epitaxial layers