Nitride semiconductor laser element
AssigneeNichia Corporation
InventorsShingo MASUI, Tomonori MORIZUMI
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Abstract
A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film.
Claims10
A method for manufacturing a nitride semiconductor laser element comprising a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer, the method comprising:
- forming the ridge;
- forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge;
- and
- forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film.
Dependencies are inferred from the claim text.