Semiconductor device and manufacturing method thereof, delamination method, and transferring method

A method for manufacturing a semiconductor device comprising the steps of:

• forming a film comprising W over a first substrate;
• forming a delamination layer comprising an oxide film and a TFT including a semiconductor film;
• and
• separating the film comprising W from the oxide film,
• wherein an oxide layer including W is formed in contact with the film comprising W when the oxide film is formed,
• wherein the oxide layer comprises WO2 and WO3,
• wherein the oxide layer is crystallized by heat treatment, and
• wherein the separation occurs in a layer of the oxide layer or at an interface between the oxide layer and the film comprising W in contact with the oxide layer.

A method for manufacturing a photoelectric transducer comprising the steps of:

• forming a film comprising a metal over a first substrate;
• forming a delamination layer comprising an oxide film and a photoelectric transducer comprising PIN junctions of Si;
• forming an oxide layer including the metal over the film comprising the metal, wherein the film comprising the metal is formed in contact with a bottom side of the oxide layer;
• performing heat treatment so as to crystallize the oxide layer;
• and
• separating the delamination layer from the film comprising the metal,
• wherein the separation occurs in the oxide layer or at an interface between the oxide layer and the film comprising the metal in contact with the oxide layer.

A method for manufacturing a photoelectric transducer comprising the steps of:

• forming a film comprising W over a first substrate;
• forming a delamination layer comprising an oxide film and a photoelectric transducer comprising PIN junctions of Si;
• and
• separating the film comprising W from the oxide film,
• wherein an oxide layer including W is formed in contact with the film comprising W when the oxide film is formed,
• wherein the oxide layer comprises WO2 and WO3,
• wherein the oxide layer is crystallized by heat treatment, and
• wherein the separation occurs in a layer of the oxide layer or at an interface between the oxide layer and the film comprising W in contact with the oxide layer.

A method for manufacturing a light emitting device comprising the steps of:

• forming a film comprising a metal over a first substrate;
• forming a delamination layer comprising an oxide film and a TFT including a semiconductor film;
• forming a light emitting element over the delamination layer;
• forming an oxide layer including the metal over the film comprising the metal, wherein the film comprising the metal is formed in contact with a bottom side of the oxide layer;
• performing heat treatment so as to crystallize the oxide layer;
• and
• separating the delamination layer from the film comprising the metal,
• wherein the separation occurs in the oxide layer or at an interface between the oxide layer and the film comprising the metal in contact with the oxide layer.

A method for manufacturing a light emitting device comprising the steps of:

• forming a film comprising W over a first substrate;
• forming a delamination layer comprising an oxide film and a TFT including a semiconductor film;
• forming a light emitting element over the delamination layer;
• and
• separating the film comprising W from the oxide film,
• wherein an oxide layer including W is formed in contact with the film comprising W when the oxide film is formed,
• wherein the oxide layer comprises WO2 and WO3,
• wherein the oxide layer is crystallized by heat treatment, and
• wherein the separation occurs in a layer of the oxide layer or at an interface between the oxide layer and the film comprising W in contact with the oxide layer.

A method for manufacturing a sensor comprising the steps of:

• forming a film comprising a metal over a first substrate;
• forming a delamination layer comprising an oxide film and a sensor element including a semiconductor film;
• forming an oxide layer including the metal over the film comprising the metal, wherein the film comprising the metal is formed in contact with a bottom side of the oxide layer;
• performing heat treatment so as to crystallize the oxide layer;
• and
• separating the delamination layer from the film comprising the metal,
• wherein the separation occurs in the oxide layer or at an interface between the oxide layer and the film comprising the metal in contact with the oxide layer.

A method for manufacturing a sensor comprising the steps of:

• forming a film comprising W over a first substrate;
• forming a delamination layer comprising an oxide film and a sensor element including a semiconductor film;
• and
• separating the film comprising W from the oxide film,
• wherein an oxide layer including W is formed in contact with the film comprising W when the oxide film is formed,
• wherein the oxide layer comprises WO2 and WO3,
• wherein the oxide layer is crystallized by heat treatment, and
• wherein the separation occurs in a layer of the oxide layer or at an interface between the oxide layer and the film comprising W in contact with the oxide layer.

A method for manufacturing a display unit in an electronic book reader, comprising the steps of:

• forming a film comprising a metal over a first substrate;
• forming a delamination layer comprising an oxide film and a TFT including a semiconductor film;
• forming an oxide layer including the metal over the film comprising the metal, wherein the film comprising the metal is formed in contact with a bottom side of the oxide layer;
• performing heat treatment so as to crystallize the oxide layer;
• and
• separating the delamination layer from the film comprising the metal,
• wherein the separation occurs in the oxide layer or at an interface between the oxide layer and the film comprising the metal in contact with the oxide layer.

A method for manufacturing a display unit in an electronic book reader, comprising the steps of:

• forming a film comprising W over a first substrate;
• forming a delamination layer comprising an oxide film and a TFT including a semiconductor film;
• and
• separating the film comprising W from the oxide film,
• wherein an oxide layer including W is formed in contact with the film comprising W when the oxide film is formed,
• wherein the oxide layer comprises WO2 and WO3,
• wherein the oxide layer is crystallized by heat treatment, and
• wherein the separation occurs in a layer of the oxide layer or at an interface between the oxide layer and the film comprising W in contact with the oxide layer.