High temperature susceptor having improved processing uniformity

A deposition system, comprising:

• a process chamber;
• a susceptor mounted within said process chamber, said susceptor comprising:
• a substrate support configured to be coupled to a material processing system, said substrate support comprising a central portion and an edge portion, wherein said central portion has a support surface configured to receive and support a substrate, and said edge portion extends beyond a peripheral edge of said substrate, and
• an edge reflector coupled to said edge portion of said substrate support and configured to partially or fully shield said peripheral edge of said substrate from radiative exchange with an outer region of said process chamber;
• a lamp array configured to radiatively heat said susceptor;
• and
• a gas distribution system configured to introduce a process gas to said process chamber to facilitate film forming reactions at a surface of said substrate.

A method of treating a substrate, comprising:

• disposing a susceptor in a material processing system, said susceptor having:
• a substrate support configured to be coupled to a material processing system, said substrate support comprising a central portion and an edge portion, wherein said central portion has a support surface configured to receive and support a substrate, and said edge portion extends beyond a peripheral edge of said substrate;
• and
• an edge reflector coupled to said edge portion of said substrate support and configured to partially or fully shield said peripheral edge of said substrate from radiative exchange with an outer region of said material processing system,
• wherein a geometry of said susceptor is characterized by a height of said edge reflector being measured from a bottom surface of said substrate to a top surface of said edge reflector, a lateral spacing between said substrate and said edge reflector being measured from said peripheral edge of said substrate to an inner surface of said edge reflector, or an aspect ratio of said height to said lateral spacing, or a combination of two or more thereof;
• disposing a substrate on said susceptor in said material processing system;
• elevating a temperature of said susceptor to heat said substrate;
• measuring a property of said substrate or said susceptor or both at two or more locations;
• and
• adjusting said height, said lateral spacing, or said aspect ratio, or any combination of two or more thereof to reduce a variation of said property measured at said two or more locations.