Semiconductor device and method for manufacturing same
AssigneeFujitsu Semiconductor Limited
InventorsHideaki KIKUCHI, Kouichi NAGAI
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Abstract
A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage that occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a ferroelectric capacitor provided with a ferroelectric film above a semiconductor substrate;
- forming a wiring directly connected to an electrode of said ferroelectric capacitor;
- and
- forming an insulating film covering said wiring;
- wherein a sputtering oxide film is formed as said insulating film and a thickness of said sputtering oxide film is set between 20 nm and 100 nm.
A method for manufacturing a semiconductor device, comprising:
- forming a ferroelectric capacitor provided with a ferroelectric film above a semiconductor substrate;
- forming a wiring directly connected to an electrode of said ferroelectric capacitor;
- and
- forming an insulating film covering said wiring;
- wherein an oxide film is formed by a low pressure CVD method at a temperature of 600° C. or lower as said insulating film.
A method for manufacturing a semiconductor device, comprising:
- forming a ferroelectric capacitor provided with a ferroelectric film above a semiconductor substrate;
- forming a wiring directly connected to an electrode of said ferroelectric capacitor;
- and
- forming an insulating film covering said wiring;
- wherein an oxide film is formed by an atmospheric pressure CVD method at a temperature between 300° C. and 500° C. as said insulating film.
Dependencies are inferred from the claim text.