Patterning method
AssigneeMacronix International Co., Ltd.
InventorHong-Ji Lee
Life of this patent
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Abstract
A patterning method is provided. First, a material layer is formed on a substrate. Thereafter, an ashable layer is formed on the material layer. Afterwards, a patterned transfer layer is formed on the ashable layer, wherein the patterned transfer layer has a critical dimension less than the exposure limit dimension. Further, the ashable layer is patterned using the patterned transfer layer or a complementary layer of the patterned transfer layer as a mask, so as to form a patterned ashable layer. The material layer is then patterned using the patterned ashable layer as a mask.
Claims20
A patterning method, comprising:
- forming a material layer on a substrate;
- forming a first ashable layer on the material layer;
- forming a patterned first transfer layer on the first ashable layer, wherein the patterned first transfer layer has a critical dimension less than an exposure limit dimension;
- patterning the first ashable layer using the patterned first transfer layer or a complementary layer of the patterned first transfer layer as a mask, so as to form a patterned first ashable layer;
- and
- patterning the material layer using the patterned first ashable layer as a mask.
A patterning method, comprising:
- sequentially forming a material layer, a first ashable layer and a patterned first transfer layer on a substrate;
- and
- sequentially transferring patterns of the patterned first transfer layer or patterns of a complementary layer of the patterned first transfer layer to the first ashable layer and the material layer.
Dependencies are inferred from the claim text.