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US 2010/0248154 A1Published application
Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition
AssigneeFujitsu Limited
InventorKoji NOZAKI
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Abstract
To provide a thiopyran derivative, having a structure expressed by the following general formula 1: where X is O or S; R1 is —H, —CH3, C2-4 alkyl group, thioether group, or ketone group; R2 is —H, —CH3, or trifluoromethyl group; and R1 and R2 may be identical to or different from each other.
Claims4
A method for manufacturing a semiconductor device, comprising:
- forming a resist film formed of a resist composition on a processing surface;
- selectively exposing the resist film to light;
- and
- developing the resist film so as to pattern the resist film,
- wherein the resist composition contains a monomer unit containing a thiopyran derivative having the structure expressed by the general formula 1:
- to where X is O or S;
- R1 is —H, —CH3, C2-4 alkyl group, thioether group, or ketone group;
- R2 is —H, —CH3, or trifluoromethyl group;
- and R1 and R2 may be identical to or different from each other.
6 more elements
Dependencies are inferred from the claim text.