Chemical vapor deposition method
AssigneesTokyo Electron Limited, Air Products and Chemicals, Inc.
InventorsEric M. LEE, Raymond Nicholas VRTIS, Mark Leonard O'NEILL, Patrick Timothy HURLEY, Jacques FAGUET, Takashi MATSUMOTO, Osayuki AKIYAMA
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Abstract
A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
Claims34
A chemical vapor deposition method for depositing a thin film on a surface, comprising:
- disposing a substrate on a substrate holder in a process chamber;
- introducing a process gas to said process chamber, wherein said process gas comprises one or more chemical precursors selected from the group consisting of a Si-containing chemical precursor and an organic chemical precursor;
- exposing said one or more chemical precursors to a non-ionizing heat source separate from said substrate holder to cause decomposition of said one or more chemical precursors;
- exposing said substrate to said decomposition of said one or more chemical precursors;
- and
- depositing a thin film upon said substrate, said thin film containing a material selected from the group consisting of a Si-containing material, an organic material, a graded organosilicon-containing material, or a mixture of two or more thereof.
Dependencies are inferred from the claim text.